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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA887 DESCRIPTION *With TO-202 package *Complement to type 2SC1848 APPLICATIONS *Medium power amplifier PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -70 -50 -5 -2 -3 1.2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SA887 SYMBOL MAX UNIT V(BR)CEO V(BR)CBO VCEsat VBEsat hFE-1 hFE-2 ICBO ICEO IEBO fT Collector-emitter breakdown voltage IC=-10mA; IB=0 IC=-1mA; IE=0 IC=-1A ;IB=-0.1A IC=-2A ;IB=-0.2 A IC=-100mA ; VCE=-5V IC=-1A ; VCE=-5V VCB=-40V; IE=0 VCE=-20V; IB=0 VEB=-5V; IC=0 IE=0.5A ; VCB=-5V -50 V Collector-base breakdown voltage -70 V Collector-emitter saturation voltage -0.6 -1.2 V Base-emitter saturation voltage -1.0 -1.5 V DC current gain 30 DC current gain 50 220 Collector cut-off current -1.0 A Collector cut-off current -100 A Emitter cut-off current -10 A Transition frequency 150 MHz hFE-2 Classifications P 50-100 Q 80-160 R 120-220 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA887 Fig.2 outline dimensions 3 |
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